Carrier Manipulation and Performance Enhancement of N-polar AlGaN-based LED with Grading Quantum Barriers-Reference-Cited by-同舟云学术

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Carrier Manipulation and Performance Enhancement of N-polar AlGaN-based LED with Grading Quantum Barriers

Published:2019 Issue:7 Volume:48 Page:723001
ISSN:1004-4213
Container-title:ACTA PHOTONICA SINICA
language:en
Short-container-title:光子学报

Author:

LU Yi 陆义,YAN Jian-chang 闫建昌,LI Xiao-hang 李晓航,GUO Ya-nan 郭亚楠,WU Zhuo-hui 吴卓辉,ZHANG Liang 张亮,GU Wen 谷文,WANG Jun-xi 王军喜,LI Jin-min 李晋闽

Publisher

Shanghai Institute of Optics and Fine Mechanics

Subject

Atomic and Molecular Physics, and Optics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate;Materials Science in Semiconductor Processing;2023-06

2. Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer;Journal of Russian Laser Research;2022-07

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