Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film-Reference-Cited by-同舟云学术

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Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film

Published:2018 Issue:3 Volume:47 Page:314003
ISSN:1004-4213
Container-title:ACTA PHOTONICA SINICA
language:en
Short-container-title:光子学报

Author:

WANG Xin 王鑫,ZHAO Yi-hao 赵懿昊,ZHU Ling-ni 朱凌妮,HOU Ji-da 侯继达,MA Xiao-yu 马骁宇,LIU Su-ping 刘素平

Publisher

Shanghai Institute of Optics and Fine Mechanics

Subject

Atomic and Molecular Physics, and Optics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Zn杂质诱导GaInP/AlGaInP红光半导体激光器量子阱混杂的研究;ACTA PHOTONICA SINICA;2024

2. Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering;Optical Engineering;2023-11-07

3. Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser;Journal of Semiconductors;2023-10-01

4. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer;Journal of Semiconductors;2022-08-01

5. 对915 nm InGaAsP/GaAsP初次外延片量子阱混杂的研究;Acta Optica Sinica;2022

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