SPICE MODEL OF AlGaN/GaN HEMTs AND SIMULATION OF VCO AND POWER AMPLIFIER-Reference-Cited by-同舟云学术

SPICE MODEL OF AlGaN/GaN HEMTs AND SIMULATION OF VCO AND POWER AMPLIFIER

Published:2004-09 Issue:03 Volume:14 Page:853-859
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

ISLAM SYED S.¹,ANWAR A. F. M.²

Affiliation:

1. Department of Electrical Engineering, Rochester Institute of Technology, 79 Lomb Memorial Drive, Rochester, NY 14623, United States

2. Department of Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, United States

Abstract

SPICE model parameters are extracted from reported experimental data. The model is implemented in the Cadence Affirma Analog Circuit Design Environment and Spectre simulator is used to simulate class-E power amplifier and ring voltage controlled oscillator (VCO) circuits. The availability of the SPICE model for GaN HEMTs ensures optimization of analog/RF circuits before an expensive cut-and-try method is employed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156404002946

Reference7 articles.

1. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates

2. GaN-based high electron-mobility transistors for microwave and RF control applications

3. Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)

4. High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

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