NOVEL APPROACHES TO MICROWAVE SWITCHING DEVICES USING NITRIDE TECHNOLOGY-Reference-Cited by-同舟云学术

NOVEL APPROACHES TO MICROWAVE SWITCHING DEVICES USING NITRIDE TECHNOLOGY

Published:2011-03 Issue:01 Volume:20 Page:219-227
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

SIMIN G.¹,WANG J.¹,KHAN B.¹,YANG J.²,SATTU A.²,GASKA R.²,SHUR M.³

Affiliation:

1. Electrical Engineering, University of South Carolina, Columbia, SC, 29208, USA

2. Sensor Electronic Technology Inc., Columbia, SC, 29209, USA

3. Electrical, Computer and System Eng., Rensselaer Polytechnic Institute, Troy, N. Y, USA

Abstract

III-Nitride heterostructure field-effect transistors (HFETs) demonstrated a new paradigm in microwave switching and control applications due to unique combination of extremely low channel resistance (leading to low loss), very high RF power, low off-state capacitance, broad range of operating temperatures, chemical inertness and robustness. The paper reviews novel approaches and recent advances in III-Nitride technology for RF switching devices leading to higher operating frequencies and even lower insertion loss.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156411006556

Reference6 articles.

1. A High-Power RF Switch IC Using AlGaN/GaN HFETs With Single-Stage Configuration

2. Current Crowding in High Performance Low-Loss HFET RF Switches

3. High-power operation of III-N MOSHFET RF switches

4. HIGH-POWER SWITCHING USING III-NITRIDE METAL-OXIDE-SEMICONDUCTOR HETEROSTRUCTURES

5. DC-110-GHz MMIC traveling-wave switch

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