High-power operation of III-N MOSHFET RF switches-Reference-Cited by-同舟云学术

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High-power operation of III-N MOSHFET RF switches

Published:2005-12 Issue:12 Volume:15 Page:850-852
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Yang Z.,Koudymov A.,Adivarahan V.,Yang J.,Simin G.,Khan M.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/33033/01549888.pdf?arnumber=1549888

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-nitride microwave control devices and ICs;Semiconductor Science and Technology;2013-06-21

2. Low frequency noise in field-plate multigate AlGaN/GaN single-pole–single-throw RF switches on silicon substrate;Microelectronics Reliability;2013-03

3. Contact and Channel 3rd-Order Nonlinearity in III-N HFETs;IEEE Transactions on Electron Devices;2011-07

4. NOVEL APPROACHES TO MICROWAVE SWITCHING DEVICES USING NITRIDE TECHNOLOGY;International Journal of High Speed Electronics and Systems;2011-03

5. Novel RF devices with multiple capacitively-coupled electrodes;2009 IEEE MTT-S International Microwave Symposium Digest;2009-06

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