CARBON NANOTUBE FIELD-EFFECT TRANSISTORS-Reference-Cited by-同舟云学术

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

Published:2006-12 Issue:04 Volume:16 Page:897-912
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

GUO JING¹,KOSWATTA SIYURANGA O.²,NEOPHYTOU NEOPHYTOS²,LUNDSTROM MARK²

Affiliation:

1. Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA

2. Electrical and Computer Engineering, Purdue University, 465 Northwestern Avenue, West Lafayette, IN 47907, USA

Abstract

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156406004077

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