Parametric Simulation Study of Control Coefficients on the On-Off Current Ratio of Single-Walled Carbon Nanotube Field Effect Transistor

Abstract

As the semiconductor business faces increasing technical and financial challenges, it is crucial to assess and analyze new ideas thoroughly. The unique properties of carbon nanotubes make them a promising material for applications in micro and nanoelectronics. The study focused on simulating the impact of control coefficients (gate and drain) on device characteristics. The simulation results were then analyzed using existing models. This research focused on studying the ION/IOFF ratio by varying the thickness and diameter of the nanotubes. The control coefficients have been observed to have an impact on the current levels. Increasing the drain control coefficient negatively impacts device performance, while raising the gate control coefficient positively affects the current ratio.