SILICON CARBIDE SCHOTTKY BARRIER DIODE-Reference-Cited by-同舟云学术

SILICON CARBIDE SCHOTTKY BARRIER DIODE

Published:2005-12 Issue:04 Volume:15 Page:821-866
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Zhao Jian H.¹,Sheng Kuang¹,Lebron-Velilla Ramon C.²

Affiliation:

1. SiCLAB, Rutgers University, 94 Brett Road, Piscataway, NJ 08854, USA

2. NASA Glenn Research Center, 21000 Brookpark Road, Cleaveland, OH 44135, USA

Abstract

This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156405003430

Reference161 articles.

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2. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

3. Z. C. Feng and J. H. Zhao, Silicon Carbide, Materials, Processing and Devices (2004) p. 205.

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