BURST REACTION OF THIN FILMS EXCITED BY HIGH-FLUX SOFT X-RAYS-Reference-Cited by-同舟云学术

BURST REACTION OF THIN FILMS EXCITED BY HIGH-FLUX SOFT X-RAYS

Published:2002-02 Issue:01 Volume:09 Page:401-405
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

KANASHIMA TAKESHI¹,OKUYAMA MASANORI¹,OKAMOTO HIROAKI¹,HATTORI KIMINORI¹,OHASHI HARUHIKO²,ISHIGURO EIJI³

Affiliation:

1. Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan

2. Experimental Facilities Division, JASRI/SPring-8, Sayo, Hyogo 679-5198, Japan

3. College of Education, University of the Ryukyus, 1 Senbaru, Nishihara-cho, Okinawa 903-0213, Japan

Abstract

High-flux soft-X-ray irradiation effects were investigated for the thick a-Si:H and μc-Si:H films, glass, MgF 2 and CaF 2 plates. The a-Si:H film of 7500 nm thickness has been burst, and its broken fragments flew off within several seconds. From the changes of Raman spectra before and after the irradiation and the film thickness dependence, it is thought that this is caused by rapid crystallization. SR-induced etching of glass, MgF 2 and CaF 2 plates has been observed. Photon energy dependence of the etching depth has been found. Exciting the Si K-shell is effective for etching the glass substrate. On the other hand, photon flux is important in the case of fluoride, and the maximum etching rate of CaF 2 is more than 1 μm/min.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X02002385

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