STRUCTURAL PROPERTIES OF GaN FILMS GROWN ON THE 6H-SiC(0001)$(\sqrt{3}\times \sqrt{3})R30^\circ$ SUBSTRATE-Reference-Cited by-同舟云学术

STRUCTURAL PROPERTIES OF GaN FILMS GROWN ON THE 6H-SiC(0001)$(\sqrt{3}\times \sqrt{3})R30^\circ$ SUBSTRATE

Published:2004-02 Issue:01 Volume:11 Page:1-6
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

DAI X. Q.¹,WU H. S.¹,XU S. H.¹,XIE M. H.¹,TONG S. Y.²

Affiliation:

1. Physics Department, The University of Hong Kong, Hong Kong, China

2. Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China

Abstract

Ab initio total energy calculations are performed to determine the interface structure of GaN films grown on the 6H - SiC (0001)[Formula: see text] substrate. The results show that the GaN film is of the wurtzite structure and has the Ga-polarity. It is also shown that stacking mismatch boundaries (SMBs) caused by the coalescence of GaN islands grown on stepped terraces of the 6H - SiC (0001) surface may be removed by stacking faults as the film grows. The types of SMBs on a stepped 6H - SiC (0001) surface are discussed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X04005937

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