FIRST PRINCIPLES STUDY OF BORON SEGREGATION ON THE ${\rm Si}(111)(\sqrt{3} \times \sqrt{3}){\rm R}30^{\circ}$ SURFACE-Reference-Cited by-同舟云学术

FIRST PRINCIPLES STUDY OF BORON SEGREGATION ON THE ${\rm Si}(111)(\sqrt{3} \times \sqrt{3}){\rm R}30^{\circ}$ SURFACE

Published:2009-04 Issue:02 Volume:16 Page:167-170
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

ZAVODINSKY V. G.¹,CHUKUROV E. N.²,KUYANOV I. A.²

Affiliation:

1. Institute for Materials Science, Far Eastern Branch of the Russian Academy of Sciences, 153 Tikhookeanskaya Str., Khabarovsk 680042, Russia

2. Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Str., Vladivostok 690041, Russia

Abstract

Segregation of boron on [Formula: see text] surface has been studied using the periodical calculations within the local density approximation. The obtained segregation energy (enthalpy) of about -1.9 eV is close to the published data of experimental studies and previous cluster semiempirical calculations. The influence of plane-wave basis set cutoff energy and the slab unit cell depth on the value of segregation energy has been investigated.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X09012470

Reference22 articles.

1. Boron surface segregation in silicon molecular beam epitaxy

2. Boron delta doping in Si and Si0.8Ge0.2layers

3. Surface Segregation of Boron During Si-MBE Growth

4. Cooperative Segregation of Boron at Si(111)

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