DYNAMIC LEEM OBSERVATION OF CU NANOSTRUCTURE FORMATION PROCESSES ON Si(111) WITH HYDROGEN

Abstract

Dynamic observation of the growth of Cu on clean and hydrogen-terminated Si(111) surfaces was carried out by using low energy electron microscopy (LEEM). On the clean surface, the two-dimensional "5×5" structure is formed, and the formation process of the "5×5" structure depends on the substrate temperature. Triangular islands are grown on the "5×5" structure after further deposition of Cu. On the other hand, the nanoscale islands are directly formed on the hydrogen-terminated surface below about 400°C. Above about 400°C, however, the Cu-induced desorption of hydrogen takes place, and the growth process becomes similar to that on the clean surface.