DOMAIN GROWTH OF THE DAS STRUCTURE ON A QUENCHED Si(111) SURFACE STUDIED BY STM-Reference-Cited by-同舟云学术

DOMAIN GROWTH OF THE DAS STRUCTURE ON A QUENCHED Si(111) SURFACE STUDIED BY STM

Published:1999-12 Issue:06 Volume:06 Page:995-1001
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

SHIMADA WATARU¹,TOCHIHARA HIROSHI¹,SATO TOMOSHIGE²,IWATSUKI MASASHI²

Affiliation:

1. Department of Molecular and Material Sciences, Kyushu University, Kasuga 816-8580, Japan

2. JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan

Abstract

We continuously observed the growth of the dimer–adatom–stacking-fault (DAS) domain, in unreconstructed regions remaining after quenching a Si(111) surface to 370–380°C, by using scanning tunneling microscopy. It was observed that a single faulted (F) half of the 9×9 unit cell of the DAS structure grows to a small 9×9 DAS domain. Continuous measurements showed that new F-halves are created sharing corner holes with existing F-halves. The creation of new isolated F-halves was very seldom at 370–380°C, and the region of the DAS structure was grown by expanding the area of the existing DAS domains.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X99001074

Reference13 articles.

1. The (7 × 7) ↔ (1 × 1) phase transition on Si(111)

2. High atom density in the ‘‘1×1’’ phase and origin of the metastable reconstructions on Si(111)

3. Evidence for the leading role of the stacking-fault triangle in the Si(111) 1×1→7×7 phase transition

4. High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si(111) Surfaces

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real time dynamics of Si magic clusters mediating phase transformation: Si(111)-(1×1) to (7×7) reconstruction revisited;Surface Science;2012-07

2. Regular arrangement of nanometre-scale clusters by surface strain on stabilized Cl/Si(111);Journal of Physics: Condensed Matter;2007-02-13

3. Formation mechanism of the Si(111)7×7 reconstruction studied by scanning tunneling microscopy: Zipper-like restructuring in the sequential size changes of isolated single faulted-halves;Surface Science;2003-03

4. Dynamic behavior of Si magic clusters on Si(111) surfaces;Surface Science;2002-08

5. Stabilization mechanism of Si(111) 7×7 domain growth: important role of shared corner-holes;Surface Science;2001-09