Dynamic behavior of Si magic clusters on Si(111) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference45 articles.
1. Intermittent diffusion on the reconstructed Si(111) surface
2. Initial adsorption process of Si atoms on an Si(111)7×7 surface studied by scanning tunneling microscopy
3. Surface diffusion of adsorbed Si atoms on the Si(111)7×7 surface studied by atom-tracking scanning tunneling microscopy
4. Transformations on clean Si(111) stepped surface during sublimation
5. An STM study of current-induced step bunching on Si(111)
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1. ATOMNYY MEKhANIZM VLIYaNIYa UPRUGIKh DEFORMATsIY EPITAKSIAL'NYKh SLOEV Ge NA POVERKhNOSTI Si(111) NA DIFFUZIYu ADATOMOV Ge;Журнал экспериментальной и теоретической физики;2024-12-15
2. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures;Journal of Crystal Growth;2024-12
3. Non-classical nucleation pathways revealed by scanning tunneling microscopy of epitaxy of covalent materials;Applied Surface Science;2020-01
4. On the role of mobile nanoclusters in 2D island nucleation on Si(111)-(7 × 7) surface;Surface Science;2018-01
5. Microscopic mechanism of the homoepitaxy onSi(111)7×7;Physical Review B;2016-07-05
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