EFFECT OF Bi SURFACTANT IN THE HETEROEPITAXIAL GROWTH OF Co ON Cu SURFACES-Reference-Cited by-同舟云学术

EFFECT OF Bi SURFACTANT IN THE HETEROEPITAXIAL GROWTH OF Co ON Cu SURFACES

Published:2006-04 Issue:02n03 Volume:13 Page:201-207
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

KAMIKO MASAO¹,CHIHAYA HIROAKI¹,SUGIMOTO WATARU¹,YAMAMOTO RYOICHI¹,OH SANGMUN²,XU JUNHUA³,KOJIMA ISAO³

Affiliation:

1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

2. Magnetic Recording System Research Department, Central Research Lab., Hitachi, Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan

3. Materials Characterization Division, National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5,1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

Abstract

We have investigated the effect of Bi on the heteroepitaxial growth of Co on Cu by reflection high-energy electron diffraction (RHEED) measurements. It was found that Bi enhanced the layer-by-layer growth of Co on the Cu (111) surfaces at 100°C. The dependence of the growth on Bi layer thickness suggested that there existed a suitable amount of Bi surfactant layer that enhanced smoother layered growth. On the contrary, for the case of Co growth on Cu (100), Bi depressed the layer-by-layer growth of Co on Cu (100). The surface segregation effect of Bi was also studied by Auger electron spectroscopy (AES).

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X06008153

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