Electronic Structure of the Ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) Interfaces in the Threshold Energy Region-Reference-Cited by-同舟云学术

Electronic Structure of the Ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) Interfaces in the Threshold Energy Region

Published:1998-02 Issue:01 Volume:05 Page:91-95
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

Benemanskaya G. V.¹,Daineka D. V.¹,Frank-Kamenetskaya G. E.²

Affiliation:

1. A. F. Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia

2. Technological Institute, St. Petersburg, Russia

Abstract

The electronic band structure of the Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) interfaces has been studied near the Fermi level at submonolayer coverages. The technique of threshold photoemission spectroscopy with linearly polarized light excitation has been employed. Surface photoemission spectra reveal on Cs-induced band which can be either below the VBM or at the Fermi level, depending on the substrate. Parameters of the Cs band and the change in ionization energy and work function are obtained as a function of Cs coverage. Experimental data provide direct evidence that the Cs/Si(100)-(2 × 1) interface exhibits semiconducting charcter in a great part of the submonolayer range, in contrast to the metallic-like Cs/Si(111)-(7 × 7) interface.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X98000190

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