Charge accumulation layer in Cs,Ba/n-GaN(0001) ultrathin interfaces: Electronic and photoemission properties-Reference-Cited by-同舟云学术

Charge accumulation layer in Cs,Ba/n-GaN(0001) ultrathin interfaces: Electronic and photoemission properties

Published:2007-04 Issue:4 Volume:49 Page:646-650
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Benemanskaya G. V.,Lapushkin M. N.,Timoshnev S. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783407040075.pdf

Reference22 articles.

1. R. Sweda, Gallium Nitride and Related Wide-Band-Gap Materials and Devices: A Market and Technology (Overview 1998–2003), 2nd ed. (Elsevier, Oxford, United Kingdom, 2000).

2. Nitride Semiconductors: A Handbook on Materials and Devices, Ed. by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley, Weinheim, 2003).

3. R. Z. Bakhtizin, Q.-Zh. Xue, Q.-K. Xue, K.-H. Wu, and T. Sakurai, Usp. Phys. Nauk 174(4), 383 (2004) [Phys. Usp. 47 (4), 371 (2004)].

4. G. Martinez-Criado, A. Cros, A. Cantarero, R. Dimitrov, O. Ambacher, and M. Stutzman, J. Appl. Phys. 88, 3470 (2000).

5. F. Degave, P. Ruterana, G. Nouet, J. H. Je, and C. C. Kim, J. Phys.: Condens. Matter. 14, 13019 (2002).

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