A SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY

Author:

XIE MAOHAI1ORCID,CHEN JINGLEI1

Affiliation:

1. Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong

Abstract

This review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.

Funder

Research Grants Council, University Grants Committee

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures;ACS Applied Materials & Interfaces;2021-10-18

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