Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures-Reference-Cited by-同舟云学术

Electronic Structure of Quasi-Freestanding WS2/MoS2 Heterostructures

Published:2021-10-18 Issue:42 Volume:13 Page:50552-50563
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Pielić Borna¹^ORCID,Novko Dino¹²^ORCID,Rakić Iva Šrut¹,Cai Jiaqi³,Petrović Marin¹^ORCID,Ohmann Robin³,Vujičić Nataša¹,Basletić Mario⁴,Busse Carsten³,Kralj Marko¹^ORCID

Affiliation:

1. Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička cesta 46, 10000 Zagreb, Croatia

2. Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal 4, 20018 Donostia-San Sebastián, Spain

3. Department Physik, Universität Siegen, Walter-Flex-Str. 3, 57068 Siegen, Germany

4. Department of Physics, Faculty of Science, University of Zagreb, Bijenička cesta 32, 10000 Zagreb, Croatia

Funder

Deutscher Akademischer Austauschdienst

European Regional Development Fund

Deutsche Forschungsgemeinschaft

Hrvatska Zaklada za Znanost

Ministarstvo Znanosti, Obrazovanja i Sporta

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c15412

Reference68 articles.

1. Graphene and boron nitride lateral heterostructures for atomically thin circuitry

2. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

3. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

4. Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures

5. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

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