PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION-Reference-Cited by-同舟云学术

PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION

Published:2009-12 Issue:06 Volume:16 Page:869-873
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

XU GUANGHUI¹,JING XIANGYANG²,ZHANG YIN³,HUANG BAIBIAO⁴

Affiliation:

1. College of Chemistry and Chemical Engineering, China University of Petroleum, Qingdao 266555, P. R. China

2. Shandong Electric Power College, Jinan 250002, P. R. China

3. Physics Department, Shandong Institute of Education, Jinan 250013, P. R. China

4. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China

Abstract

( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films have been successfully prepared on P-type Si (100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi 2 Ti 2 O 7 was improved after Ce ions were doped. The dielectric constants of ( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films annealed at 650° and 700°C were higher than that of Bi 2 Ti 2 O 7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C – V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films had potential for DRAM and MOS applications.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X09013414

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