Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology, New Delhi 110 016, India
Abstract
In this paper, we have examined the effect of quantum confinement of carriers on the threshold voltage of strained-silicon (s- Si ) nanoscale Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Using results from quantum theory and two-dimensional simulation, we show that strain-induced threshold voltage roll-off in s- Si nanoscale MOSFETs can be overcome by decreasing s- Si layer thickness. Based on our simulation study, we provide an optimization between threshold voltage, strain and s- Si layer thickness.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology
Cited by
20 articles.
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