CROSS-VALIDATION OF NUMERICAL SCHEMES FOR EXTENDED HYDRODYNAMICAL MODELS OF SEMICONDUCTORS-Reference-Cited by-同舟云学术

CROSS-VALIDATION OF NUMERICAL SCHEMES FOR EXTENDED HYDRODYNAMICAL MODELS OF SEMICONDUCTORS

Published:2000-08 Issue:06 Volume:10 Page:833-861
ISSN:0218-2025
Container-title:Mathematical Models and Methods in Applied Sciences
language:en
Short-container-title:Math. Models Methods Appl. Sci.

Author:

ANILE ANGELO MARCELLO¹,JUNK MICHAEL²,ROMANO VITTORIO³,RUSSO GIOVANNI⁴

Affiliation:

1. Dipartimento di Matematica, Università di Catania, viale A. Doria 6 - 95125 Catania, Italy

2. Fachbereich Mathematik, Universität Kaiserslautern, Postfach 3049, 67653 Kaiserslautern, Germany

3. Politecnico di Bari, sede di Taranto, Viale del Turismo 8 - 74100 Taranto, Italy

4. Dipartimento di Matematica, Università dell'Aquila, Via Vetoio, loc. Coppito - 67100 L' Aquila, Italy

Abstract

The numerical integration of the hydrodynamical model of semiconductors based on extended thermodynamics has been tackled. On account of the mathematical complexity of the system, no theoretical conditions of convergence are available for the existing schemes. Therefore in order to obtain numerical solution it was almost mandatory to resort to a cross-validation comparing the results given by two different methods. The kinetic scheme and the finite difference method represented by a suitable modification of the Nessyahu–Tadmor scheme furnish numerical results for the ballistic diode problem in good agreement even for non-smooth solutions.

Publisher

World Scientific Pub Co Pte Lt

Subject

Applied Mathematics,Modelling and Simulation

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218202500000434

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