Growth of MoS2 and metal back electrode-dependent performance of MoS2/Si heterojunction solar cells
Author:
Affiliation:
1. Shenzhen Research Institute of Xiamen University, Shenzhen 518000, P. R. China
2. School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
3. College of Energy, Xiamen University, Xiamen 361102, P. R. China
Abstract
Funder
Shenzhen Technical Project
Basic and Applied Basic Research Foundation of Guangdong Province
Publisher
World Scientific Pub Co Pte Ltd
Subject
General Materials Science
Link
https://www.worldscientific.com/doi/pdf/10.1142/S1793604722500217
Reference15 articles.
1. Resistive switching effect of Ag/MoS2/FTO device
2. MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven Visible-Near Infrared Photodetectors
3. Large area MoS2/Si heterojunction-based solar cell through sol-gel method
4. High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells
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