I – V Characteristics of Hf0.5Zr0.5O2 films prepared via sol–gel and pulsed laser deposition methods

Abstract

Stable [Formula: see text] (HZO) sols were obtained by adding acetylacetone (AcAc), and the mechanism through which AcAc improved the quality of the sol and the gel film was analyzed. Absorption spectroscopy results show that AcAc can chelate with [Formula: see text] and [Formula: see text], thus improving the hydrolysis resistance of the sol and the gel film, which optimizes their quality. Then, Pt/HZO/Pt structures were prepared via the sol–gel (SG) and pulsed laser deposition (PLD) methods, and their [Formula: see text] curves were studied. The Pt/HZO/Pt structure prepared via the SG (PLD) method shows a pronounced bipolar resistance switching (BRS) (unipolar resistance switching (URS)) effect. It was found that there are several defects on the surface of the HZO film prepared via the SG method, which permit oxygen ions to enter/exit HZO, thus resulting in the BRS effect. However, there are fewer defects on the surface of the HZO film prepared via the PLD method, which results in the URS effect.