Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy-Reference-Cited by-同舟云学术

Electrochemically driven dual bipolar resistive switching in LaNiO₃/SmNiO₃/Nb:SrTiO₃ heterostructures fabricated through selective area epitaxy

Published:2022 Issue:19 Volume:10 Page:7707-7716
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Yong¹²^ORCID,Liu Ming¹²,Ma Chunrui²^ORCID,Lu Lu¹²,Han Chuan Yu³

Affiliation:

1. School of Microelectronics & Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, Xi'an 710049, China

2. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China

3. School of Microelectronics, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Abstract

The coexistence of two stable BRS modes with opposite polarity is observed within the same micro-sized epitaxial LaNiO3/SmNiO3/NSTO heterostructure cell fabricated through selective area epitaxy.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00204C

Reference52 articles.

1. Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory