LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES

Author:

LIU GUANXIONG1,STILLMAN WILLIAM2,RUMYANTSEV SERGEY23,SHUR MICHAEL2,BALANDIN ALEXANDER A.4

Affiliation:

1. Nano-Device Laboratory, Department of Electrical Engineering, Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521, USA

2. Center for Integrated Electronics and Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

3. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

4. Nano-Device Laboratory, Department of Electrical Engineering and Materials Science, Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521, USA

Abstract

We report results of the experimental investigation of the low-frequency noise in graphene transistors. The graphene devices were measured in three-terminal configuration. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and the Hooge parameter αH ~10-3. Both top-gate and back-gate devices were studied. The analysis of the noise spectral-density dependence on the gate biases helped us to elucidate the noise sources in these devices. We compared the noise performance of graphene devices with that of carbon nanotube devices. It was determined that graphene devices works better than carbon nanotube devices in terms of the low-frequency noise. The obtained results are important for graphene electronic, communication and sensor applications.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

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