High frequency noise of epitaxial graphene grown on sapphire-Reference-Cited by-同舟云学术

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High frequency noise of epitaxial graphene grown on sapphire

Published:2013-04-03 Issue:5 Volume:7 Page:348-351
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Ardaravicˇius L.,Liberis J.,Šermukšnis E.,Matulionis A.,Hwang J.,Kwak J. Y.,Campbell D.,Alsalman H. A.,Eastman L. F.,Spencer M. G.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Thinking outside the silicon box

2. State-of-the-Art Graphene High-Frequency Electronics

3. van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst

4. Scaling of High-Field Transport and Localized Heating in Graphene Transistors

5. Channel Length Scaling in Graphene Field-Effect Transistors Studied with Pulsed Current−Voltage Measurements

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-heating controlled current-voltage and noise characteristics in graphene;Journal of Physics D: Applied Physics;2020-12-21

2. A balance equations approach for the study of the dynamic response and electronic noise in graphene;Journal of Applied Physics;2017-05-14

3. Noise temperature in graphene at high frequencies;Semiconductor Science and Technology;2016-05-24

4. Diffusion coefficient, correlation function, and power spectral density of velocity fluctuations in monolayer graphene;Journal of Applied Physics;2013-10-14

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