Scaling of High-Field Transport and Localized Heating in Graphene Transistors-Reference-Cited by-同舟云学术

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Scaling of High-Field Transport and Localized Heating in Graphene Transistors

Published:2011-09-13 Issue:10 Volume:5 Page:7936-7944
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Bae Myung-Ho¹²,Islam Sharnali¹²,Dorgan Vincent E.¹²,Pop Eric¹²³

Affiliation:

1. Micro & Nanotechnology Lab, University of Illinois, Urbana−Champaign, Illinois 61801, United States

2. Department of Electrical & Computer Engineering, University of Illinois, Urbana−Champaign, Illinois 61801, United States

3. Beckman Institute, University of Illinois, Urbana−Champaign, Illinois 61801, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn202239y

Reference32 articles.

1. Carbon Wonderland

2. Temperature-Dependent Transport in Suspended Graphene

3. Thermal properties of graphene and nanostructured carbon materials

4. Two-Dimensional Phonon Transport in Supported Graphene

5. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

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3. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors;Advanced Materials;2022-11-07

4. Voltage‐Enhanced Processing of Biochar*;Voltage‐Enhanced Processing of Biomass and Biochar;2022-07-08

5. Microemitter-Based IR Spectroscopy and Imaging with Multilayer Graphene Thermal Emission;Nano Letters;2022-04-18

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