Infrared Emissivity–Resistivity Correlation of RU Thin Films for EUV Pellicle Applications

Author:

Hwang Jeongwoon12ORCID,Kim Dongwook1ORCID,Lee Yeonghun13ORCID,Hwang Taesoon1ORCID,Ahn Jinho45ORCID,Cho Kyeongjae1ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA

2. Department of Physics Education, Chonnam National University, Gwangju 61186, South Korea

3. Department of Electronics Engineering, Incheon National University, Incheon 22012, South Korea

4. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea

5. EUV-IUCC (Industry University Cooperation Center), Hanyang University, Seoul 04763, South Korea

Abstract

A high-infrared (IR) emissivity is required to dissipate heat effectively from high-temperature surfaces even in a near-vacuum environment. This radiative cooling capability is essential for the emissive layer of EUV pellicles operating under high vacuum conditions with increasing EUV source powers to ensure thermomechanical stability. We compute the IR emissivity of metal films by combining the classical oscillator model and DFT calculations. Based on the calculations, we predict a positive correlation between the electrical resistivity and IR emissivity of metal films, which is consistent with a recent experiment on Ru thin films. Our findings can provide a practical indicator for achieving high IR emissivity of metallic thin films based on electrical measurements. This emissivity–resistivity correlation can provide an effective way to search a large material space, and choose and synthesize a highly emissive layer of EUV pellicles.

Funder

National R&D Program

National Research Foundation of Korea

Publisher

World Scientific Pub Co Pte Ltd

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