HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE-Reference-Cited by-同舟云学术

HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE

Published:2012-10 Issue:05 Volume:07 Page:1250037
ISSN:1793-2920
Container-title:Nano
language:en
Short-container-title:NANO

Author:

WANG YANGYANG¹,ZHENG JIAXIN¹²,NI ZEYUAN¹,FEI RUIXIANG¹,LIU QIHANG¹,QUHE RUGE¹²,XU CHENGYONG¹,ZHOU JING¹,GAO ZHENGXIANG¹,LU JING¹

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

2. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China

Abstract

By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons ( ZSiNRs and ZGeNRs ). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency (SFE) of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Condensed Matter Physics,General Materials Science

Link

https://www.worldscientific.com/doi/pdf/10.1142/S1793292012500373

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