1/f NOISE IN EXTRINSIC SEMICONDUCTOR MATERIALS INTERPRETED AS MODULATED GENERATION-RECOMBINATION NOISE

Abstract

We investigate fixed dopants in the presence of mobile point defects. A defect entering the first Bohr radius RB of a dopant will modulate the generation-recombination (g-r) process. The times a defect walks inside and outside of RB are found to be power-law distributed; correspondingly, the modulated g-r process exhibits 1/fb noise. The predicted Hooge coefficient depends on RB, on the normalized fluctuations of charge carriers, the number of lattice sites and on the modulation depth of the g-r process.