PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

Abstract

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.