LOW POWER, LOW LATENCY, HIGH THROUGHPUT 16-BIT CSA ADDER USING NONCLOCKED PASS-TRANSISTOR LOGIC

Author:

SENTHILPARI C.1,DIWAKAR K.1,SINGH AJAY KUMAR1

Affiliation:

1. Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh lama, 75450 Melaka, Malaysia

Abstract

As the CMOS technology continues to scale to achieve higher performance, power dissipation and robustness to leakage and, process variations are becoming major obstacles for circuit design in the nanoscale technologies. Due to increased density of transistors in integrated circuits and higher frequencies of operation, power consumption, propagation delay, PDP, and area is reaching the lower limits. We have designed 16-bit adder circuit by Carry-Select Adder (CSA) using different pass-transistor logic. The adder cells are designed by DSCH3 CAD tools and layout are generated by Microwind 3 VLSI CAD tools. Using CSA technique, the power dissipation, PDP, area, transistor count, are calculated from the layout cell of proposed 16-bit adder for Ultra Deep Submicron feature size of 120, 90, 70, and 50 nm. The UDSM signal parameters are calculated such as signal to noise ratio (SNR), energy per instruction (EPI), Latency, and throughput using layout parameter analysis of BSIM 4. The simulated results show that the CPL is dominant in terms of power dissipation, propagation delay, PDP, and area among the other pass gate logics. Our CPL circuit dominates in terms of EPI, SNR, throughput, and latency in signal parameters analysis. The proposed CPL adder circuit is compared with reported results and found that our CPL circuit gives better performance.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Low Power and Improved Speed Montgomery Multiplier using Universal Building Blocks;International Journal of Electronics and Telecommunications;2023-07-26

2. Comparative Analysis of EEPL and CPL Techniques Using 2:1 Multiplexer Based on 18nm FinFET Technology;2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2023-07-07

3. Comparative Analysis of DCVSL and MDCVSL Techniques in 18nm FinFET Technology;2023 International Conference on Distributed Computing and Electrical Circuits and Electronics (ICDCECE);2023-04-29

4. Comparative Analysis of EEPL and PPL Techniques in 18nm FinFET Technology;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

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