A 1.2 V CMOS COMMON-GATE LOW NOISE AMPLIFIER FOR UWB WIRELESS COMMUNICATIONS-Reference-Cited by-同舟云学术

A 1.2 V CMOS COMMON-GATE LOW NOISE AMPLIFIER FOR UWB WIRELESS COMMUNICATIONS

Published:2013-08 Issue:07 Volume:22 Page:1350052
ISSN:0218-1266
Container-title:Journal of Circuits, Systems and Computers
language:en
Short-container-title:J CIRCUIT SYST COMP

Author:

ALAVI-RAD HOSEIN¹,ZIABAKHSH SOHEYL²,YAGOUB MUSTAPHA C. E.³

Affiliation:

1. Department of Electrical Engineering, Langaroud Branch, Islamic Azad University, Langaroud, Iran

2. Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran

3. School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON, Canada K1N 6N5, Canada

Abstract

In this paper, an ultra-wide band 0.18 μm CMOS common-gate low-noise amplifier (LNA) is presented. Designed in the ultra-wide band frequency range of 3.1–10.6 GHz, it uses a current-reused technique with modified input matching. This approach allowed obtaining a flat broadband gain of 12.75 ± 0.83 dB with an input reflection coefficient less than -5.5 dB, an output reflection coefficient less than -7 dB, and a noise figure less than 3.7 dB. Furthermore, the proposed low-power LNA consumes only 12.14 mW (excluding buffer) from a 1.2 V supply voltage.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218126613500527

Reference14 articles.

1. A UWB CMOS transceiver

2. A 0.9-V, 7-mW UWB LNA for 3.1–10.6-GHz wireless applications in 0.18- CMOS technology

3. A 5.2-GHz LNA in 0.35-μm CMOS utilizing inter-stage series resonance and optimizing the substrate resistance

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