An Ultra-Wideband 0.1–6.1 GHz Low Noise Amplifier in 180 nm CMOS Technology

Abstract

In this paper, an Ultra-Wideband (UWB) low noise amplifier (LNA) with low power consumption and high-power gain in 180[Formula: see text]nm CMOS technology is presented. An innovative combination of conventional methods to design UWB-LNA, i.e., resistive-feedback, inductive-series peaking, noise cancelling and inductive degeneration techniques is described here. The proposed LNA consists of two common source amplifiers with resistive feedback in which the noise and power consumption have been reduced by using the noise cancelling and current reuse techniques, respectively. Also, resistive feedback in the first stage reduces input resistance, hereby improving input impedance matching. In the second stage, which is used to increase the power gain, a common source structure with inductive-series peaking and noise cancellation techniques is used. The analytical results agree well with the post layout simulation results. The post-layout simulation shows a gain of [Formula: see text][Formula: see text]dB and noise figure (NF) of 2.3[Formula: see text]dB in the whole [Formula: see text][Formula: see text]dB bandwidth of 0.1[Formula: see text]GHz to 6.1[Formula: see text]GHz, while the S11 and S22 are less than [Formula: see text][Formula: see text]dB. The proposed circuit has a figure of merit of 9.9 which is significantly improved compared to the previous works. The total power dissipation is only 7.3[Formula: see text]mW, and the active area is less than 0.7[Formula: see text]mm2.