ELECTROLUMINESCENCE IN LASER DIODE NANOSTRUCTURES p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs UNDER UNIAXIAL COMPRESSION-Reference-Cited by-同舟云学术

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ELECTROLUMINESCENCE IN LASER DIODE NANOSTRUCTURES p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs UNDER UNIAXIAL COMPRESSION

Published:2009-04 Issue: Volume: Page:
ISSN:
Container-title:Physics, Chemistry and Application of Nanostructures
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Author:

BOGDANOV E. V.¹,Ya. MININA N.¹,SHIROKOV S. S.¹,YUNOVICH A. E.¹,KISSEL H.²

Affiliation:

1. Physics Department, M.V. Lomonosov Moscow State University, Leninskie Gory 1, 119991 Moscow, Russia

2. R&D Department, DILAS Diodenlaser GmbH, Galileo-Galiley Str. 10, 55129 Mainz, Germany

Publisher

WORLD SCIENTIFIC

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Gain Tuning in Type-I Al0.45Ga0.55As/GaAs0.84P0.16/Al0.45Ga0.55As Nano-heterostructure;Intelligent Computing Techniques for Smart Energy Systems;2019-12-17

2. Optical gain tuning within IR region in type-II In0.5Ga0.5As0.8P0.2/GaAs0.5Sb0.5 nano-scale heterostructure under external uniaxial strain;Superlattices and Microstructures;2017-11

3. Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6 nano-scale heterostructure under external uniaxial strain;Superlattices and Microstructures;2016-10

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