STUDY ON THE INTERFACE STRUCTURE: DIAMOND THIN FILM EPITAXY ON (001) SILICON SUBSTRATE-Reference-Cited by-同舟云学术

STUDY ON THE INTERFACE STRUCTURE: DIAMOND THIN FILM EPITAXY ON (001) SILICON SUBSTRATE

Published:1999-02-10 Issue:03n04 Volume:13 Page:125-129
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

MENG Q. B.¹,FEI Y. J.¹,KANG J.¹,XIONG Y. Y.¹,LIN Z. D.¹,FENG KE-AN¹,WU Z. J.²,ZHANG S. Y.²

Affiliation:

1. State Key Laboratory of Surface Physics, Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 10008, China

2. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China

Abstract

An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal structure, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984999000178

Reference18 articles.

1. Low-Pressure, Metastable Growth of Diamond and "Diamondlike" Phases

2. Diamond-Ceramic Coating of the Future

3. Diamond epitaxy on a Si(001) substrate: a comparison of structural models

4. Molecular-dynamics study of diamond/silicon (001) interfaces with and without graphitic interface layers

5. TEM study of the structure and chemistry of a diamond/silicon interface

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