TEM study of the structure and chemistry of a diamond/silicon interface

Abstract

The interface between diamond and silicon, fabricated by growing diamond films on (001) silicon by microwave plasma assisted chemical vapor deposition (MPACVD), was characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Two types of interface morphology were identified. Type A interfaces contain an amorphous transition layer composed of silicon, carbon, and oxygen; the diamond overgrowth on this layer consists of nanocrystalline grains with random orientations. Type B interfaces consist of large diamond grains having special orientations with respect to the silicon substrate, without an obvious presence of a glassy phase and with a much lower oxygen content than type A interfaces.