EFFECT OF ANNEALING TREATMENT ON FERROELECTRIC AND ELECTRICAL CHARACTERISTICS OF Bi4-XLaXTi3O12 THIN FILMS ON ITO/GLASS SUBSTRATE

Abstract

In this study, the effects of annealing temperatures on microstructure and growth properties of Bi 3.9 La 0.1 Ti 3 O 12 (BLT) thin films on ITO substrate under conventional furnace annealing processing as a function of annealing temperatures were developed. The ferroelectric and physical properties of BLT thin films were investigated. The maximum capacitance and minimum leakage current density of BLT thin films under conventional furnace annealing processing were 4.5 nF and 10-6 A/cm2, respectively. In addition, the X-ray diffraction (XRD) patterns and grain size of SEM morphology exhibited the growth and nucleation properties of BLT thin films increased with the increase of conventional furnace annealing temperatures. The results demonstrated the correlation between the electrical, physical properties and growth and nucleation features of BLT thin films.