THE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELD-Reference-Cited by-同舟云学术

THE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELD

Published:2011-11-21 Issue:32 Volume:25 Page:2451-2459
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

YESILGUL U.¹,UNGAN F.¹,KASAPOGLU E.¹,SARI H.¹,SÖKMEN I.²

Affiliation:

1. Physics Department, Cumhuriyet University, 58140 Sivas, Turkey

2. Physics Department, Dokuz Eylül University, 35160 Izmir, Turkey

Abstract

The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984911027467

Reference26 articles.

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4. Binding energies of excitons and donors in a double quantum well in a magnetic field

5. Far-infrared absorption by shallow donors in multiple-well GaAs-Ga1−xAlxAs heterostructures

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