Optical absorption coefficients in GaN/Al(Ga)N double inverse parabolic quantum wells under static external electric field

Abstract

In this work, we have investigated theoretically the effects of applied electric field on the linear and nonlinear optical properties in a GaN/Al[Formula: see text]Ga[Formula: see text]N double inverse parabolic quantum well for different Al concentrations at the well center. Our calculations are based on the potential morphing method in the effective mass approximation. The systematic theoretical investigation contains results with all possible combinations of the involved parameters, such as quantum well width, quantum barrier width, Al concentration at each well center and magnitude of the external electric field. Our results show that the electric fields strengths, the parameter of nanostructure and incident optical intensity have a great effect on the optical characteristics of these nanostructures. Thus, the absorption coefficients which can be suitable for great performance optical modulators and multiple infrared optical device applications can be easily obtained by tuning the external electric field value and the Al concentration at the well center.