Analysis of GaN-based HEMTS with AlN buffer layers by using Raman spectroscopy-Reference-Cited by-同舟云学术

Analysis of GaN-based HEMTS with AlN buffer layers by using Raman spectroscopy

Published:2021-07-27 Issue:29 Volume:35 Page:
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

Lee Cheng Che¹,Lee Hsin Jung¹,Lee Hsin Che¹^ORCID,Lee Wei Yu¹,Chuang Wei Ching¹

Affiliation:

1. Graduate Institute of Electro-Optical and Materials Science, National Formosa University, No. 64, Wunhua Road, Huwei Township, Yunlin 632, Taiwan

Abstract

In this paper, AlGaN/GaN HEMTs with an AlN buffer layer were fabricated. Analyses on the crystal quality of the GaN epitaxial layer by Raman spectroscopy have been purposed. By introducing an AlN layer on sapphire substrate, the maximum drain current of the HEMT increased from 481 mA/mm to 522 mA/mm at [Formula: see text] V. Subthreshold slope was reduced from 638.3 mV/decade to 240.9 mV/decade and the electron mobility increased from 1109 cm2 V[Formula: see text]s[Formula: see text] to 1781 cm2 V[Formula: see text]s[Formula: see text]. These results showed that using an AlN buffer layer can improve the crystal quality of the GaN epitaxial layer, thus optimize the device performances of the GaN-based HEMTs.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984921410104

Reference21 articles.

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