Author:
Huang Wei-Ching,Chu Chung-Ming,Wong Yuen-Yee,Chen Kai-Wei,Lin Yen-Ku,Wu Chia-Hsun,Lee Wei-I,Chang Edward-Yi
Funder
Ministry of Science and Technology of Taiwan and TSMC
National Chung-Shan Institute of Science and Technology, Taiwan
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference32 articles.
1. High-brightness InGaNblue, green and yellow light-emitting-diodes with quantum-well structures;Nakamura;Jpn. J. Appl. Phys.,1995
2. Very-high power density AlGaN/GaN HEMTs;Wu;IEEE Trans. Electron Devices,2001
3. D. Pavlidis, P. Valizadeh, S.H. Hsu, AlGaN/GaN High Electron Mobility Transistor (HEMT) reliability, in: Proceedings of the GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference, 2005, pp. 265–268.
4. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111);Anand;Appl. Phys. Lett.,2015
5. GaN growth using GaN buffer layer;Nakamura;Jpn. J. Appl. Phys.,1991
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