COMPARISON OF HIGH AND LOW FIELD ELECTRON TRANSPORT IN Al0.2Ga0.8N, AlN AND GaN

Abstract

We present a comprehensive study of the transport dynamics of electrons in the binary and ternary compounds AlN , GaN and Al 0.2 Ga 0.8 N . Calculations are made using a non-parabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady-state velocity field curves and low field mobilities are calculated at room temperature. The results are in fair agreement with other recent calculations.