Thermoelectric power and low-field electron mobility in Al_xGa_{1-x}N lattice-matched to GaN-Reference-Cited by-同舟云学术

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Thermoelectric power and low-field electron mobility in Al_xGa_{1-x}N lattice-matched to GaN

Published:2009-01-01 Issue: Volume: Page:
ISSN:1303-6122
Container-title:Turkish Journal of Physics
language:en
Short-container-title:Turkish Journal of Physics

Author:

ARABSHAHI H.

Publisher

The Scientific and Technological Research Council of Turkey (TUBITAK-ULAKBIM) - DIGITAL COMMONS JOURNALS

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode;IEEE Transactions on Electron Devices;2011-04

2. Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency;Journal of Applied Physics;2011-01-15

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