INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

Abstract

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.