EFFECTS OF POST-ANNEALING ON THE MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF AMORPHOUS LaAlO3 FILM GROWN ON Si
Author:
Affiliation:
1. College of Physics Science and Technology, Hebei University, Hebei 071002, China
2. Department of Physics, Blinn College, Bryan, TX 77805, USA
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0217984912501485
Reference16 articles.
1. Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon
2. Interfacial properties of single-crystalline CeO2 high-k gate dielectrics directly grown on Si (111)
3. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
4. Thermal decomposition of ZrO2/SiO2 bilayer on Si(001) caused by void nucleation and its lateral growth
5. Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)
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