Photothermoelectric resistance effect observed in Ti/SiO2/Si structure induced by 10.6 μm CO2 laser

Author:

Sun Xu1,Zhu Pengfei12,Zhu Kun2,Ping Yunxia1,Zhang Chaomin1,Sun Xiaohui1,Song Pei1

Affiliation:

1. School of Mathematics, Physics and Statistics, Shanghai University of Engineering Science, Shanghai 201620, China

2. School of Physics and Electrical Engineering, Liupanshui Normal University, Liupanshui 553004, China

Abstract

A novel photothermoelectric resistance effect of the Ti/SiO2/Si films induced by 10.6 [Formula: see text]m CO2 laser is discovered and investigated. The transient response of the resistance is observed and analyzed in this work. Under the continuous irradiation of the laser, the thermal resistance value changes with the irradiating time and gradually reaches a stable saturation. The results indicate that the rise time of thermal resistance is shortened and its change rate increased as laser power gets higher. The inner battery of the ohmmeter exerts the positive or negative bias voltage, causing the diffusion motion direction of the hot electrons to be opposite or the same direction with the drift motion, which can increase or decrease the thermal resistance value. Those experimental phenomena are explained by the drift and diffusion motion of the electrons. Based on the results, the Ti/SiO2/Si structure is an attractive candidate for thermal effect devices.

Funder

National Natural Science Foundation of China

Physics Key Discipline of Liupanshui Normal University

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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