Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate-Reference-Cited by-同舟云学术

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Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate

Published:2017-01 Issue: Volume:104 Page:871-877
ISSN:0017-9310
Container-title:International Journal of Heat and Mass Transfer
language:en
Short-container-title:International Journal of Heat and Mass Transfer

Author:

Zhang Jingchao,Hong Yang,Liu Mengqi,Yue Yanan,Xiong Qingang,Lorenzini Giulio

Funder

University of Nebraska-Lincoln Holland Computing Center

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Fluid Flow and Transfer Processes,Mechanical Engineering,Condensed Matter Physics

Reference55 articles.

1. Designer Dirac fermions and topological phases in molecular graphene;Gomes;Nature,2012

2. High-speed graphene transistors with a self-aligned nanowire gate;Liao;Nature,2010

3. Electrical contacts to two-dimensional semiconductors;Allain;Nat. Mater.,2015

4. The valley Hall effect in MoS2 transistors;Mak;Science,2014

5. Edge nonlinear optics on a MoS2 atomic monolayer;Yin;Science,2014

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4. From first principles to finite elements: unraveling the mechanical behavior of zigzag phosphorene nanosheets;Applied Physics A;2024-03-06

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