DEFECT TRANSFORMATIONS AT LOW TEMPERATURES IN AlxGa1-xAs COMPOUND SEMICONDUCTORS-Reference-Cited by-同舟云学术

DEFECT TRANSFORMATIONS AT LOW TEMPERATURES IN AlxGa1-xAs COMPOUND SEMICONDUCTORS

Published:2001-12-20 Issue:28n29 Volume:15 Page:1437-1443
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

STONERT ANNA¹²,TUROS ANDRZEJ¹²,NOWICKI LECH¹²,BREEGER BERHARD³,WENDLER ELKE³,WESCH WERNER³

Affiliation:

1. Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw, Poland

2. The Andrzej Soltan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw, Poland

3. Friedrich Schiller University, Institute of Solid State Physics, Max-Wien-Platz 1, 07743 Jena, Germany

Abstract

Defect recovery at low tempetatures in N-ion implanted Al x Ga 1-x As (0 ≤ x ≤ 1) ternary compounds were studied. AlGaAs epitaxial layers were implanted at 51 K or 77 K with 150 KeV N-ions to fluences ranging from 4 × 1013 to 5 × 1015 at/cm2. Implanted crystals were analyzed in situ using the RBS/channeling technique. Successive measurements were performed during warming up of samples to room temperature. For low Al content, a large recovery stage between 200 K and 300 K was observed. For x > 0.5, a continuous damage recovery at the implantation temperatures due to the analyzing beam bombardment was observed. It leads to the substantial reduction of the principal recovery stage. For AlAs (x = 1) negligible defect recovery in the whole temperature range was noticed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984901003366

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